Abstract
Buried layers have been produced by implanting carbon with an energy of 100 keV in silicon wafers and subsequent annealing. These layers were used as an etch stop in KOH. The samples were analyzed with RBS, channeling and PIXE with regard to the depth distribution of carbon, the annealing of the silicon layer at the surface and the effect of segregation. Various implanting temperatures and annealing parameters were used. Recrystallisation of the silicon surface layer was observed by channeling measurements. With the PIXE method minor surface contaminations caused by etching and rinsing of the wafers were found. The depth profiles measured by RBS were compared to Monte Carlo calculations with the TRIM program. Furthermore, the thicknesses of the layers were also calculated by measurements of optical interferences in reflectivity. These were in good agreement with the RBS results.
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