Abstract
In this paper will present the properties of PN diode before and after expose by radiation. Although, radiation help to improve the performance of semiconductor device but still has some damage in device structure. In previous article I have showed performance improve after expose by soft radiation. The device is exposed by low frequency X-ray radiation (soft radiation flash exposure: SRFE) technique with few second for several times. In principle of PN diode after fabrication will has defects from process such as ion implantation, doped and silicon wafer process. The results show temperature while SRFE expose on device that generate high temperature on surface and silicon boundary that may the optimize energy and expose time for treatment damage of PN diode.
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