Abstract
Die-to-wafer heterogeneous integration of single-crystalline GaN film with CMOS compatible Si(100) substrate using the ion-cutting technique has been demonstrated. The thermodynamics of GaN surface blistering is in-situ investigated via a thermal-stage optical microscopy, which indicates that the large activation energy (2.5 eV) and low H ions utilization ratio (~6%) might result in the extremely high H fluence required for the ion-slicing of GaN. The crystalline quality, surface topography and the microstructure of the GaN films are characterized in detail. The full width at half maximum (FWHM) for GaN (002) X-ray rocking curves is as low as 163 arcsec, corresponding to a density of threading dislocation of 5 × 107 cm−2. Different evolution of the implantation-induced damage was observed and a relationship between the damage evolution and implantation-induced damage is demonstrated. This work would be beneficial to understand the mechanism of ion-slicing of GaN and to provide a platform for the hybrid integration of GaN devices with standard Si CMOS process.
Highlights
In recent years, due to its direct and wide bandgap, high breakdown voltage, and optical nonlinearity, GaN has attracted much attention for the applications of electronic and optoelectronic devices such as high electron mobility transistors (HEMTs), laser diodes (LDs), light emitter diodes (LEDs) as well as GaN nanophotonics[1,2,3,4]
As the GaN films are transferred from the bulk GaN wafer, the density of the threading dislocations is inherited from the bulk GaN, and the lattice mismatch with the substrate does not affect the bonding of GaN films with the handle substrates[14]
High-quality GaN films can be directly transferred on Si(100) substrates coated by SiO2 layer in which the SiO2 layer acts as an electrical insulator or optical cladding layer
Summary
S. et al Thermodynamic model of helium and hydrogen co-implanted silicon surface layer splitting. A. Nanomechanical characterization of cavity growth and rupture in hydrogenimplanted single-crystal BaTiO3. J. Study of the effect of H implantation and annealing on LiTaO3 surface blistering. Hydrogen blistering of silicon: Progress in fundamental understanding. K. Effects of irradiation temperature and dose on exfoliation of H+-implanted silicon carbide. Layer splitting process in hydrogen-implanted Si, Ge, SiC, and diamond substrates. Moutanabbir, O. et al Experimental elucidation of vacancy complexes associated with hydrogen ion-induced splitting of bulk GaN. S. The Role of the Nucleation Annealing Temperature Annealing on the Exfoliation of Hydrogen-Implanted GaN. U., Buca, D., Mantl, S., Wernicke, T. Investigation of blistering process in H-implanted semipolar GaN.
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