Abstract
Abstract Solution processed inverted quantum-dot light-emitting diodes (QLEDs) are developed in this work. To protect the QDs from dissolving by the solvents of upper layers, two commonly used hole transporting layer (HTL) materials for inverted QLEDs, poly (9-vinlycarbazole) (PVK) and 4-butylphenyl-diphenyl-amine (TPD), and three different solvents, chlorobenzene (CB), methylbenzene (MB) and chloroform (CF) are first investigated. The QDs layer has been less affected by CB solvent than another two solvents, meanwhile, we found that the device PL peak wavelength can be modulated by the HTL materials categories. Second, after overall estimating the wetting enhancement ability and the additive residue of several different additives, IPA was selected as additive to facilitate the deposition of a hydrophilic poly(ethylenedioxythiophene)/polystyrenesulfonate (PEDOT:PSS) hole injection layer on top of hydrophobic PVK. Finally, the best-performing device with improved electronic properties is achieved. The main findings in present work may offer a practicable strategy for further research, leading to achieve more efficient solution processed inverted QLEDs.
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