Investigation on the Wetting Behavior of 3C-SiC Surfaces: Theory and Modeling

Abstract

Silicon carbide (SiC) is a promising material for high-power and high-frequency electronics due to its wide band gap, large breakdown field, and high thermal conductivity. Several applications of micro- and nanoelectronics are found in aqueous environments; thus, it is important to understand the atomic-scale interactions between SiC and water, as these interactions govern the transport processes at solid–liquid interfaces. In an effort to characterize the solid–liquid interactions, the wetting behavior of 3C-SiC was numerically investigated. The wettability of two crystallographic planes ((100) and (111)) was characterized, allowing to have silicon or carbon terminations. It was found that the crystallographic planes as well as the atomic surface terminations play an important role in the wetting behavior of 3C-SiC. Higher hydrophilicity was observed for the Si-terminated surfaces as well as for the SiC(111) crystallographic plane. A combination of a mean-field model of wettability and an analysis of the...