Abstract
Gallium nitride (GaN) films with excellent structural, electrical and optical properties have been epitaxially grown on La0.3Sr1.7AlTaO6 (LSAT) (111) substrates by radio-frequency molecular beam epitaxy at low temperature. The GaN films grown at 500 °C exhibits high crystalline quality with the (0002) and (10−12) full width at half maximum of 0.056° and 0.071°. There is a maximum of 1.1-nm-thick interfacial layer existing between the as-grown GaN and LSAT (111) substrate, and the as-grown about 300-nm-thick GaN films are almost fully relaxed only with a 0.0094% in-plane tensile strain. Hall and photoluminescence (PL) measurements also reveal outstanding electrical and optical properties of the as-grown GaN films on LSAT. This achievement brings the prospect for achieving highly-efficient GaN-based optoelectronic devices on LSAT (111) substrates.
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