Abstract
Abstract : The ammonothermal growth technique to fabricate large size (>2 inch) gallium nitride (GaN) crystals has recently seen increased interest due to the achievements in the technique published over the last 2-3 years. The first ever 2 inch GaN bulk crystal, to be reported in the April 2009 issue of MRS Bulletin, holds the great promise that ammonothermally produced GaN may become an important GaN substrate material due to the superior structural quality over HVPE GaN. In order to hold up with the progress, not at least provide a scientific platform, the solubility of GaN in supercritical ammonia (NH3) containing mineralizers of different chemical nature was examined.
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