Abstract
Relaxation time of metal capped amorphous silicon-indium-zinc-oxide (a-SIZO) thin film transistors (TFTs) has been investigated. As increasing the length of metal capping layer, the electrical characteristics improved and threshold voltage (Vth) moved to negative direction from 1.4 to 0.6 V. The fabrication of thin film type inverter was conducted with the SIZO TFT of enhancement mode and 40 µm metal capped SIZO TFT of depletion mode. The voltage transfer curve showed inversion clearly. The relaxation time has been measured to confirm the electrical performance in the case of TFTs, indicating insignificant signal distortion. This result means it is possible to apply to integrated circuits or the next generation memory devices without any significant signal distortion.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Transactions on Electrical and Electronic Materials
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
