Investigation on the origin of the giant dielectric constant in CaCu3Ti4O12 ceramics through analyzing CaCu3Ti4O12–HfO2 composites

Abstract

Abstract A full range of CaCu 3 Ti 4 O 12 –HfO 2 (CCTO–HfO 2 ) composites were prepared by sintering mixtures of the two components at 1000 °C for 10 h. X-ray diffraction studies confirmed the two-phase nature of the composites. The evolution of the microstructure in the composites, in particular, the size distribution of CCTO grains, was examined by scanning electron microscopy. The studies showed that, as more HfO 2 was added, the abnormal grain growth of CCTO and coarsening of the microstructure were gradually suppressed. As a result, the average CCTO grain size was reduced from 50 to 1 μm. The measured dielectric constants agree well with the values calculated from Lichtenecker's logarithmic law, using only the dielectric constants of pure CCTO and HfO 2 as two end points. The agreement suggests to us that the dielectric constant of CCTO is dominated by domain boundaries within the grains rather than by grain boundaries between the grains.