Abstract
Resistive random-access memories have attracted significant attention in memory applications, while the physical mechanism behind their resistive switching behavior is still unclear. As a key issue, the migration of oxygen vacancies (VO) directly influences the performance of devices in the formation and rupture of conductive filaments (CFs). In this work, the distance of VO migration is performed as electric field dependent and affects the performance of the device. Sufficient distance of VO migration is essential for formation and rupture of CF completely, leading to, ideally, SET/RESET transition of the device. Based on this mechanism, an enhanced electric field is designed that optimizes the stability of the device significantly, which is demonstrated to be a promising approach to optimize the properties of the device. The investigation is helpful for guiding the design of device structures.
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