Abstract
A new method of ultrasonic chemical mechanical polishing (CMP) combined with ultrasonic lapping is introduced to improve the machining performance of carbide silicon (SiC). To fulfill the method, an ultrasonic assisted machining apparatus is designed and manufactured. Comparative experiments with and without ultrasonic assisted vibration are conducted. According to the experimental results, the material removal rate (MRR) and surface generation are investigated. The results show that both ultrasonic lapping and ultrasonic CMP can decrease the two-body abrasion and reduce the peak-to-valley (PV) value of surface roughness, the effect of ultrasonic in lapping can contribute to the higher MRR and better surface quality for the following CMP. The ultrasonic assisted vibration in CMP can promote the chemical reaction, increase the MRR and improve the surface quality. The combined ultrasonic CMP with ultrasonic lapping achieved the highest MRR of 1.057 μm/h and lowest PV value of 0.474 μm. Therefore this sequent ultrasonic assisted processing method can be used to improve the material removal rate and surface roughness for the single crystal SiC wafer.
Highlights
Being one of the third-generation semiconductor materials, carbide silicon (SiC) has attracted much attention both in academic research and industrial application, because it has remarkable physical and chemical properties such as high thermal conductivity, high hardness, chemical resistance, temperature resistance, transparency to light wave, etc. [1]
During chemical mechanical polishing (CMP) is investigated; secondly, the effect of ultrasonic on the CMP performance of Si-face SiC is investigated; the surface status is observed by the optical microscope and atomic force microscopy (AFM), the chemical corroding is measured by XPS, and the material removal rate (MRR) is calculated according to the mass change measured by electronic balance
The processed SiC is cleaned by the inorganic solvents to remove inorganic pollutants and strongly adsorptive pollutants by hydrogen peroxide (H2 O2 ), hydrofluoric acid (HF), and hydrochloric acid (HCl), simultaneously vibrated by ultrasonic wave
Summary
Being one of the third-generation (wide bandgap) semiconductor materials, carbide silicon (SiC) has attracted much attention both in academic research and industrial application, because it has remarkable physical and chemical properties such as high thermal conductivity, high hardness, chemical resistance, temperature resistance, transparency to light wave, etc. [1]. On considering improving the material removal rate (MRR) of SiC during CMP, the reported literature mainly focuses on CMP slurry [5,6,7,8,9,10]. The addition of a high-hardness abrasive combined with an oxidizer to the slurry is another method to increase MRR. Ultrasonic assisted CMP has been reported to be a cost-efficient method to improve the processing performance. Tsai et al [15] combined the ultrasonic CMP with ultrasonic dressing of a diamond disk to increase the MRR for copper substrate with an improved surface roughness and the torque force was dramatically reduced. The effect of ultrasonic on the chemical corrosion of Si-face SiC during CMP is investigated; secondly, the effect of ultrasonic on the CMP performance of Si-face SiC is investigated; the surface status is observed by the optical microscope and AFM, the chemical corroding is measured by XPS, and the MRR is calculated according to the mass change measured by electronic balance
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