Abstract
The electrical properties of p-GaAs/n+-Si, p+-Si/n-GaAs, p+-GaAs/n+-Si, p+-Si/n+-GaAs, n+-Si/n+-GaAs, and p+-Si/p+-GaAs junctions fabricated by surface-activated bonding (SAB) were investigated. An amorphous layer with a thickness of 3 nm was found across the bonding interface without annealing. The current–voltage (I–V) characteristics of p+-GaAs/n+-Si, p+-Si/n+-GaAs, n+-Si/n+-GaAs, and p+-Si/p+-GaAs junctions showed excellent linearity. The interface resistance of n+-Si/n+-GaAs junctions was found to be 0.112 Ω·cm2, which is the smallest value observed in all the samples. The resistance decreased with increasing annealing temperature and decreased to 0.074 Ω·cm2 after the junction annealing at 400 °C. These results demonstrate that n+-Si/n+-GaAs junctions are suitable for the connection of subcells in the fabrication of tandem solar cells.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
