Abstract

ABSTRACTZnO thin films were potentiostatically deposited on ITO electrode in 0.1 M Zn(NO3)2 and the film growth mechanism was investigated by using FTIR and electrochemical quartz crystal microbalance(EQCM). Intermediates formed in the initial stage were identified as soluble zinc hydroxides and a critical concentration of OH was required for the ZnO to be deposited. A rapid growth rate of ZnO film observed in the presence of O2 was attributed to the higher cathodic current which produces OH

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