Abstract
Current-controlled liquid phase epitaxy (CCLPE) is a novel method for growing epitaxial layers with precise control of thickness and composition. In the present study, a theoretical model has been developed to understand the growth kinetics of GaAs based on the diffusion and electromigration of solute atoms. Concentration profiles have been simulated by incorporating Peltier effect and electromigration. The growth rates in the absence and presence of convection due to Peltier effect and electromigration are calculated. The results are discussed in detail.
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