Abstract
New concept of capacitor dielectric thin film was successfully demonstrated through graded Hf/sub x/Al/sub y/O/sub z/ dielectric thin film accompanied by post ozone annealing for the application to DRAM capacitor. MIM capacitor with graded Hf/sub x/Al/sub y/O/sub z/ dielectric films showed drastically reduced leakage current and highly improved breakdown voltage by 0.45-0.75V maintaining the same EOT value. In the case of graded film with Hf/Al=1.5/1, EOT showed very small value of 12.3/spl Aring/ and leakage current could be maintained as low as 1E/sup -16/A/cell at +1.0V.
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