Investigation on the compositionally graded Hf/sub x/Al/sub y/O/sub z/ films for TiN based DRAM capacitor

D.-S Kil,Sung-Wook Park Sung-Wook Park,Ki-Seon Park Ki-Seon Park,Noh-Jung Kwak Noh-Jung Kwak,Hyun-Cheol Sohn Hyun-Cheol Sohn,Seung-Jin Yeom Seung-Jin Yeom,Jae-Sung Roh Jae-Sung Roh,Kwon Hong Kwon Hong,Han-Sang Song Han-Sang Song,Jin-Woong Kim Jin-Woong Kim

doi:10.1109/essder.2005.1546662

Investigation on the compositionally graded Hf/sub x/Al/sub y/O/sub z/ films for TiN based DRAM capacitor

D.-S Kil, Sung-Wook Park Sung-Wook Park + Show 8 more

https://doi.org/10.1109/essder.2005.1546662

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Publication Date: Dec 12, 2005

#Dielectric Film #DRAM Capacitor + Show 8 more

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Abstract

New concept of capacitor dielectric thin film was successfully demonstrated through graded Hf/sub x/Al/sub y/O/sub z/ dielectric thin film accompanied by post ozone annealing for the application to DRAM capacitor. MIM capacitor with graded Hf/sub x/Al/sub y/O/sub z/ dielectric films showed drastically reduced leakage current and highly improved breakdown voltage by 0.45-0.75V maintaining the same EOT value. In the case of graded film with Hf/Al=1.5/1, EOT showed very small value of 12.3/spl Aring/ and leakage current could be maintained as low as 1E/sup -16/A/cell at +1.0V.

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