Investigation on temperature dependent DC characteristics of gallium oxide metal-oxide-semiconductor field-effect transistors from 25 °C to 300 °C

Abstract

High temperature performance of Ga2O3 metal-oxide-semiconductor field-effect transistors (MOSFETs) was investigated at temperatures of 25 °C–300 °C. A 30.7% on-state current reduction was observed when the temperature increased from 25 °C to 300 °C. On-state current and peak intrinsic transconductance decreased when temperature increases and followed a power law, indicating that high temperature electron mobility is limited by phonon scattering. Threshold voltage also shift positively with an increase rate of ∼2.3 mV °C−1 when the temperature increased. In terms of off-state currents, traps with an activation energy of 0.42 eV were responsible for increased off-state current at high temperature and high drain voltage regime.