Investigation on Strain Sensitivity and Temperature Behaviour of Nitrogen Doped 3C-SiC Thin Films

Abstract

Electrical resistance-strain behaviour of nitrogen doped 3C-SiC thin films was investigated to determine whether they could be used as strain gauges. Using a hot wall vertical low pressure chemical vapour deposition (LPCVD) reactor, these films were deposited on thermally oxidised Si (100) and alumina substrates at 2.5 mbar pressure and 1040°C temperature from methyltrichlorosilane (MTS) precursor. The nitrogen doping gas utilised was ammonia (NH3). Using four-point bending method, the gauge factor (GF) was determined for all thin films (0, 9, 17, and 30 atomic % nitrogen doped). Systematic annealing of films in a vacuum atmosphere was used to determine the TCR of nitrogen doped 3C-SiC (111). Film sheet resistance was evaluated using a four-probe approach, and it was observed to decrease as the temperature rises from 40 to 550°C. The resistivity, average TCR, and strain sensitivity of film doped with 17 atomic % nitrogen concentration were 0.14 cm, -103 ppm/°C, and -9.6, respectively, indicating that it can be employed as a strain gauge material in high temperature applications. However, film doped with 30 atomic % of nitrogen concentration showed an increase in the resistivity, TCR and strain sensitivity.