Abstract
Stochastic resonance behavior of single electrons in a quantum dot and its summing network is investigated theoretically. Dynamic behavior of the single electron in the system at finite temperature is analyzed using a master equation with a tunneling transition rate. The analytical model indicates that an input-output correlation has a peak as a function of temperature, which confirms the appearance of the stochastic resonance. The peak position and height depend on charging energy, tunnel resistance, and input signal frequency. It is also found that the correlation is enhanced by formation of a summing network integrating quantum dots in parallel. The present model quantitatively explains the stochastic resonance behaviors of the single electrons predicted by a circuit simulation (Oya, Asai, & Amemiya, 2007).
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