Abstract
AbstractIn this work, the deposition of silicon carbide lines using a tetramethylsilane (TMS) precursor was investigated. Effects of target temperatures on the morphology and crystal structure of the deposits were examined. It was found that the morphology of the SALD SiC depends strongly on the target temperature. The contour of the cross section of the SiC deposits changes from a triangle to trapezoid to volcano shape and the surface morphology of the deposited lines changes from smooth to rough to porous as the target temperature increases. A critical target temperature was found to be about 700°C to initiate deposition of SiC under the current experimental configurations. X-ray diffraction analyses show that the SALD SiC formed at 1000°C contains both crystalline and amorphous phases. The results are briefly discussed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
