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Abstract
In this work, we studied molybdenum (Mo) and its conductive oxides (MoOx) for p-type metal gate application. Three compositions of MoOx have been investigated in this work. The resistivity of Mo/MoOx was found to significantly increase with increasing oxygen incorporation. Clear phase separation of all MoOx was observed after high temperature thermal treatment. Incorporation of oxygen was found to be effective to increase the work function (WF) of Mo. However, after full integration process, significant WF decrease of MoOx was also observed, which may be induced during the high temperature junction activation process. The interfacial silicon oxide layer growth and the EOT dependent Vfb roll-off behavior will also be discussed.
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