Abstract

Co (3%)-doped ZnO and Co, Cu (Co = 3% and Cu = 2 to 4%) dual-doped ZnO nanostructures were prepared using chemical co-precipitation route. The structural analysis indicated no alteration in the structure of hexagonal ZnO and the absence of secondary/impurity phases induced by Co/Cu addition into ZnO. The reduction of crystallite size (≈ 25 nm) at Cu = 2% is due to the suppression of growth rate and the dissimilarities between Co2+/Cu2+ and Zn2+ ions, and the enhanced crystallite size (≈ 29 nm) at Cu = 4% is responsible for the more defect sites associated with interstitials and vacancies of Co2+ and Cu2+ in Zn–O lattice. The persistent c/a ratio (~ 1.602) signified the absence of structural modification by Co/Cu substitution for Zn. The decrease in optical absorption, increase in transmittance and the enhanced energy gap of ZnO by Co/Cu addition were discussed by consideration of dopants and the stimulated defect states. The continuous widening of energy gap (ΔEg ≈ 0.08 eV) with Cu substitution is clarified using Burstein–Moss (BM) band filling effect through energy-level diagram. The existence of Zn–O and Zn–Co/Cu–O bondings around ≈ 442–468 cm−1 was verified by Fourier transform infra-red analysis. The elevated intensity ratio between green and ultra-violet photoluminescence (IG/IUV) at higher Cu concentration, Cu = 4% (≈ 0.74), revealed the occurrence of higher number of defects, particularly oxygen-related defect states, in (Zn, Co, Cu)O lattice. The observed room temperature ferromagnetism (RTFM) in Co, Cu-doped ZnO nanostructures is discussed based on the oxygen vacancy-mediated bound magnetic polarons (BMP) and the exchange interaction between the free electrons and local spin-polarized electrons.

Highlights

  • In recent times, semiconducting nanostructures of ZnO have received a large amount of credit as a probable candidature in the field like solar energy conversion, different luminescence, varistors, transparent UV protection films, different type of sensors, spintronic applications, etc. [1,2,3,4,5,6], owing to their abnormal electrical, mechanical, optical, and magnetic characteristics which originates from the size dependent quantum effects

  • Structural analysis indicated that no alteration in hexagonal structure of ZnO and the absence of secondary / impurity phases were detected by Co/Cu addition into ZnO

  • The size reduction at Cu = 2% is due to the suppression of growth rate and the dissimilarities between Co2+/Cu2+ and Zn2+ and improved size at Cu = 4% is responsible for the more defect sites in Zn-O lattice

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Summary

Introduction

In recent times, semiconducting nanostructures of ZnO have received a large amount of credit as a probable candidature in the field like solar energy conversion, different luminescence, varistors, transparent UV protection films, different type of sensors, spintronic applications, etc. [1,2,3,4,5,6], owing to their abnormal electrical, mechanical, optical, and magnetic characteristics which originates from the size dependent quantum effects. In the current work, Zn0.97-xCo0.03CuxO (0 ≤ x ≤ 0.04) nanostructures have been prepared by co-precipitation technique and the influence of Cu on its optical, photoluminescence and magnetic properties has been investigated and reported in detail. Since, both Co and Cu addition into ZnO primary system induce the secondary phases at higher doping levels, Co and Cu doping is limited as 3 and up to 4% [35,36,37,38], respectively

Materials And Experimental Procedure
Characterization technique
XRD - Structural studies
SEM and TEM - Microstructural studies
EDX - Compositional analysis
Optical absorption and transmittance spectra
Band gap estimation
FTIR analysis - Chemical bonding
Magnetic properties
Conclusions
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