Abstract
Interfacial effect of amorphous cobalt-iron-boron (Co60Fe20B20) films deposited on GaAs(001) by DC magnetron-sputtering has been precisely studied. In-plane uniaxial magnetic anisotropy (UMA) as a significant magnetic property has been found in Co60Fe20B20/GaAs heterostructure and the UMA field (Hu) of (∼75 Oe) is achieved. Magnetic Schottky barrier contact has been achieved by current-voltage (I–V) characteristic through the interface with a barrier height of 0.72 eV, which is an appropriate for tunneling injection of spin current from ferromagnet to semiconductors in spin-injection devices.
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