Abstract
β-Ga2O3 films were grown on AlN templates by metal organic chemical vapor deposition (MOCVD), and the properties of the β-Ga2O3/AlN heterostructures were investigated in detail. The β-Ga2O3/AlN heterostructure with abrupt interface was observed by the high resolution transmission electron microscope with high angle annular dark field. The refactor of the atoms at the interface is discussed. Moreover, the band structure of the MOCVD β-Ga2O3/AlN heterostructures was investigated by x-ray photoelectron spectroscopy. The conduction band and valence band offsets of β-Ga2O3/AlN heterostructure were calculated to be −1.44 eV ± 0.05 eV and −0.14 eV ± 0.05 eV, respectively.
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