Abstract
Abstract A heterostructure of n-type hydrogenated nanocrystalline silicon (nc-Si:H) film with p-type crystalline silicon, i.e., (n)nc-Si:H/(p)C-Si, was fabricated to investigate carrier characteristics and transport. After electrical experiments, carrier information, such as hole and electron as well as 2-dimension electronic gas in the studied system, was identified respectively. The forward current conduction was analyzed while the reverse current transport was distinguished as different mechanisms within the different range of negative applied voltage. The performed study also leads us to ascribe the main origin of short transient times on the produced structure to a tunneling mechanism.
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