Abstract
The bottom-gate top-contact amorphous InZnSnMgO (a-IZTMO) thin film transistors (TFTs) were fabricated by radio frequency (RF) magnetron sputtering in this paper. The X-ray diffraction pattern indicated the IZTMO thin film annealed at 350 °C was amorphous. The a-IZTMO thin film exhibited high transmittance in the visible range. The electrical performance of a-IZTMO TFTs were investigated which exhibited an excellent performance with a saturated mobility (μsat) of 36.6 cm2 v−1 s−1, subthreshold swing (SS) of 0.34 V dec−1, and threshold voltage (VTH) of 1.1 V. The bias stress stability of the a-IZTMO TFT was also investigated. The VTH shifted respectively about + 4.4 V and − 5.6 V after 3600 s of positive bias stress (PBS) and negative bias stress (NBS).
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