Abstract

The first principles study of two-dimensional magnesium (Mg) chalcogenides (X = O, S, Se, Te) in square lattice (s-MgX) and hexagonal phases (h-MgX) is investigated for the first time. Except for h-MgSe and h-MgTe, all the square lattice and hexagonal structures in MgX compounds are dynamically stable, agreeing to phonon dispersion calculations. The electronic band structure and projected density of states of s- and h-MgX materials provided insight into the essence of electronic properties of these compounds. All s- and h-MgX compounds are found to be indirect wide band gap semiconductors, according to calculations using PBE and HSE06 functionals. The effective mass, mobility and relaxation time of electrons and holes carriers from the band structure of s- and h-MgX are examined to acquire a better intuition into these materials. Along the zigzag direction, h-MgTe has a largest mobility as well as relaxation time of 78104.92 cm2 V−1s−1 and 64385.56 fs, respectively in the entire MgX series. Additionally, we examined their mechanical stability through elastic characteristics, and the derived elastic parameters and polar graphs of Young's modulus and Poisson's ratio verifying their mechanical stability. In application of parallel and perpendicular field polarizations, the optical properties of s- and h-MgX are examined. The thermoelectric properties of the complete s- and h-MgX series are examined for the temperature range from 50 K to 800 K. The results of the present study reveal that s-MgO and h-MgS are the better thermoelectric materials in the considered series. Finally, since these compounds are mostly UV-active, they may find useful applications in UV-protectant and UV-photodetectors materials.

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