Abstract
ABSTRACT Pure Bi4Ti3O12 thin films were prepared on Pt/Ti/SiO2/Si substrates by the metalorganic deposition technique and the switching current densities were measured during a fatigue process. It is found that the peak switching current density and switching time decreases with the increase of switching cycles, which was attributed to a domain wall pinning effect by defects inside thin films. Using the modified Kolmogorov-Avrami theory, the switching current densities were well fitted. The results show that the percentage of 2D domain growth decreases and the percentage of 1D domain growth increase during the fatigue period, which reveals that 2D domain growth has an absolute priority to be pinned compared with 1D domain growth. Based on domain wall pinning effect, the mechanism of the increased activation field during the fatigue process is briefly discussed. These results are of great important in the switching kinetics and fatigue mechanisms in ferroelectric films.
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