Abstract
In-depth compositional analysis of zirconium dioxide thin film deposited on GaAs substrate by e-beam evaporation has been carried out using non-destructive soft x-ray reflectivity (SXR) technique. The compositional details of the film are quantitatively estimated from the best fit of the optical constant profile derived from SXR measurements over 55–150Å wavelength region. The SXR analysis reveals the film composition as 60% ZrO2, 20% Zr0.8O2.2 & 20% oxygen. The interface layer formed at film/substrate interface region is found to be comprised of 25% Ga2O3, 20% As2O3, 35% ZrO2 and 20% oxygen phases.
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