Abstract
This article reports an experimental approach to analyze the kink effect phenomenon which is usually observed during the GaN high electron mobility transistor (HEMT) operation. De-trapping of charge carriers is one of the prominent reasons behind the kink effect. The commonly observed non-monotonic behavior of kink pattern is analyzed under two different device operating conditions and it is found that two different de-trapping mechanisms are responsible for a particular kink behavior. These different de-trapping mechanisms are investigated through a time delay analysis which shows the presence of traps with different time constants. Further voltage sweep and temperature analysis corroborates the finding that different de-trapping mechanisms play a role in kink behavior under different device operating conditions.
Highlights
There has been a lot of progress in AlGaN/GaN HEMT device technology in recent years; even there exist ambiguity in some issues that is affecting the device performance during its normal operation
In addition to AlGaN/GaN HEMTs kink effect has been observed in other types of field effect transistors (FETs).[4,5,6]
Lin et al.[7] suggested that kink effect in Si3N4 passivated AlGaN/GaN HEMT was due to the traps that existed at cryogenic temperature, but the effect of inter-band impact ionization was not ruled out
Summary
There has been a lot of progress in AlGaN/GaN HEMT device technology in recent years; even there exist ambiguity in some issues that is affecting the device performance during its normal operation. The influence of different device operating conditions on the de-trapping mechanism is still missing in a particular kink pattern.
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