Abstract
AbstractA typical aggregation‐induced emission luminogen (AIE‐gen) is introduced into perovskite CH3NH3PbI3 and the material and photophysical properties of hybrid films are investigated with absorption, X‐ray diffraction, and steady‐state photoluminescence (PL) characterization. When excited by a high photon flux (4.08 × 1022 cm−2 s−1) laser beam (3.82 eV) at room temperature, the CH3NH3PbI3 polycrystalline thin films exhibit dual emission locating at 1.64 eV (P1) and 1.59 eV (P2). The two PL peaks are attributed to free carrier (FC) recombination and exciton recombination, respectively. Additionally, an introduction of AIE‐gen changes the peak value ratio of P1:P2, indicating the radiative recombination ratio of FCs versus excitons in perovskite films can be tuned with this method. Since recombination of FCs and excitons plays a key role in photovoltaic and luminescent devices, this finding helps to clarify the recombination behavior of photogenerated carriers in perovskites and promote their further applications in photoelectric devices.
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