Abstract
ZnO single crystals has been implanted with 400 keV Cu ions at fluences of 2,5 x 1016 ions/cm2 at room temperature. The cathodoluminescence (CL) measurements of pure and Cu implanted samples has been reported at UV-visible range at both room and different temperatures. After the implantation process, the samples were annealed for 1 hour at 1000ºC. The effects of ion implantation and annealing temperature and on the CL signals were researched with the data obtained. The CL spectrum of pure ZnO exhibited two emission bands at 385 nm and 550 nm. There are some changes in the emission bands in the CL spectrum that are thought to be due to the presence of Cu ions. Also it is possible to say that the annealing temperature can strongly influence CL intensity.
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