Abstract
AbstractEmissive properties of ZnO are of great interests in terms of the UV LED device design. The persistent “green” luminescence due to deep defect is an obstacle for obtaining an intense UV emission, expected from ZnO. We report the positive role of thermally diffused H toward quenching the defect emission in ZnO. It is suggested that hydrogen passivates defects responsible for DLE, resulting in efficient near band edge luminescence. As‐grown ZnO/SiNx:H/Si films, deposited at 350 °C demonstrate intense narrow peaks of UV emission at 380 nm and a ratio of emission intensities, NBE/DLE ≈ 42. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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