Abstract
A series of ZnCdO thin films have been fabricated on sapphire by pulsed-laser deposition (PLD), successfully. To investigate the effect of Cd concentration on structural and optical properties of ZnCdO films, x-ray diffraction (XRD), ultraviolet-visible spectroscopy (UV-vis), and x-ray photoelectron spectroscopy (XPS) are employed to characterize the films in detail. The XRD pattern indicates that the ZnCdO thin films have high single-orientation of the c axis. The energy bandgap values of ZnCdO thin films decrease from 3.26 eV to 2.98 eV with the increasing Cd concentration (x) according to the − curve. Furthermore, the band offsets of ZnCdO/ZnO heterojunctions are determinated by XPS, indicating that a type-I alignment takes place at the interface and the value of band offset could be tuned by adjusting the Cd concentration.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
