Investigation of yellow luminescence intensity of N-polar unintentionally doped GaN**

Abstract

This paper reports that the yellow luminescence intensity of N-polar GaN Epi-layers is much lower than that of Ga-polar ones due to the inverse polarity, and reduces drastically in the N-polar unintentionally-doped GaN after etching in KOH solution. The ratio of yellow luminescence intensity to band-edge emission intensity decreases sharply with the etching time. The full width at half maximum of x-ray diffraction of (10–12) plane falls sharply after etching, and the surface morphology characterized by scanning electron microscope shows a rough surface that changes with the etching time. The mechanism for the generation of the yellow luminescence are explained in details.