Abstract
This work intends to improve the GaN HEMT device breakdown voltage, by uniformly distributing peak electric field using field plate engineering technique. A peak electric field reduction is observed by adding field plate at the gate end along with remolding the distribution of electric field linearly. The device breakdown voltage is improved by gradual decrease in electric field is observed. To analyze the OFF-state breakdown voltage, the gate field plate of various lengths is used and optimum size is calculated for GaN HEMTs. A breakdown voltage of 350 V is prominently observed in the simulation results. Moreover, the obtained results show a good substantiation with experimental data. The DC Characteristics and AC characteristics of the proposed structure exhibit an enhanced performance than the existing structures, justifying the GaN field plated HEMT as to be a promising solution for Microwave monolithic Integrated Circuit applications.
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