Investigation of tunable Fano resonances based on the InSb metamaterials

Abstract

Based on the hybrid semiconductive InSb metamaterials (MMs), we investigated the tunable Fano resonances in the terahertz regime, including the effects of carrier concentrations of InSb layer, environment temperatures and operation frequencies. The results manifested that an obvious Fano resonance was observed by using the heterostructure of InSb bars, the peak value of Fano resonance reached more than 0.97 with a high [Formula: see text]-factor of larger than 50. By changing the carrier concentrations of InSb layer, the propagation properties of semiconductor MM structures can be effectively modulated, the amplitude modulation of Fano resonance can reach more than 80%. The results are helpful for designing novel tunable terahertz devices with high [Formula: see text]-factor, e.g. modulators, sensors and antenna.