Abstract
“Modulating the front gate response of independently driven double gate (IDDG) FETs by the application of a control voltage on the second gate” is elaborately studied in this work using TCAD simulations and shown as a simple and powerful technique to tune the RF characteristics of the IDDG device. The input impedance, ft, and noise figure (NF) of the device can be modulated (tuned) by varying the control voltage applied to the gate2 of the IDDG device. Control gate bias values of 0Vt o+0� 4 V gives a wide tuning range for real part and imaginary part of the input impedance. NQS delay can be tuned in a better manner for low values of the control gate voltage (−0� 4Vt o 0 V). Signal gate voltages of 0.4 V to 0.5 V and control gate voltages of around −0� 1Vt o+0� 1V gives the optimum noise performance.
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