Abstract
In this study, the trap properties of composite Hf0.83Zr0.17O2 high-k gate stack p-type MOSFETs (pMOSFETs) were investigated by simultaneous low-frequency (1/f) noise and random telegraph noise measurements. Compared with pure ZrO2 pMOSFETs, the interface property and drive current of Hf0.83Zr0.17O2 pMOSFETs were both improved, and the depth of the effective centroid of the fixed charges was close to the insulator/semiconductor interface. This result indicated that the trapping behavior of hole capture from a ZrO2 film can be suppressed by mixing the film with a HfO2 film. Consequently, comparable oxide trap densities and trapping depths between Hf0.83Zr0.17O2 and HfO2 pMOSFETs can be seen. In addition, it was found that the unified model can appropriately interpret the 1/f noise mechanism in Hf0.83Zr0.17O2 pMOSFETs.
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