Abstract
In this work, the transient characteristics of nanoscale field-effect transistors (FETs) have been investigated using a deterministic solver based on the time-dependent multi-subband Boltzmann transport equation (BTE). The response to a step signal superimposed on the gate or drain electrode is simulated. The transient process can be understood as a combination of electrostatic and transport relaxation. The extracted transient relaxation time for the drain current, which is unrelated to the direct-current (DC) shift, is important for transient device modeling.
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