Investigation of topological regime in Bi2Se3 thin films through low-frequency electric noise

Abstract

Topological insulators are considered new states of quantum matter that cannot be systematically related to conventional insulators and semiconductors. Among them, Bi2Se3 has attracted an increasing interest due to a simple surface band structure and due to a strong contribution of the surface to transport. While the dc electric transport properties have been extensively studied, intrinsic fluctuations and their effect on the surface conduction have received less attention. In order to better investigate these aspects, a detailed characterization of the low-frequency noise, also known as noise spectroscopy, has been made in Bi2Se3 thin films. The experimental results have been obtained for different samples thickness and geometry, in a temperature range from 300 down to 8 K, and as a function of dc bias current and gate voltage. While the observed spectral noise shows a typical thermal and shot noise part, an unusual reduction of the 1/f noise component is found, especially in the low-temperature region. A correlation of this behavior with structural and dc electric transport investigations suggests that it could be an indication of the occurrence of the topological regime. Flicker noise measurements, therefore, could be considered as a valid alternative technique to standard topological surface state spectroscopy.