Abstract
Scientific progress is made in understanding photoluminescence (PL) lines in thallium‐doped silicon. Two PL lines called A and P, which appear after quenching, are found to exhibit irreversible as well as reversible behavior under the application of light‐induced degradation (LID) treatments. The reversible behavior is similar to changes of a P line in indium‐doped silicon due to LID treatments, which have led to the identification of this P line to be caused by an InSi‐Sii‐defect. By exploiting the metastability of defects from the ASi‐Sii category, the experimental findings of this study indicate that the underlying defect for the A and P line in thallium‐doped silicon is the TlSi‐Sii‐defect.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
