Abstract
Volatile threshold switch (TS) devices, which display abrupt changes in conductivity in response to external stimuli such as temperature or electric field, are currently being explored for uses in novel electronic devices [1]–[3]. One such device, Phase-FET, integrates a TS with the source ofa conventional MOSFET such that the abrupt threshold switching phenomena and variable resistance states can be harnessed to produce steep sub-kT/q ON at reduced supply voltage for a given I OFF [4], [5]. Achieving these characteristics, however, requires careful design of the TS OFF -state resistance with respect to the MOSFET channel resistance. In this work, we experimentally demonstrate the importance of TS OFF-state resistance on Mo'Sj-bascd Phase-FET performance using VO 2 and Ag/Hf0 2 /Pt TS devices to show 30x enhanced I ON (at matched $\mathrm{I}_{\mathrm{OFF}}$ ) over baseline MOSFET when TS and MOSFET OFF-state resistance are matched.
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