Abstract
High-power three-level neutral-point-clamped (NPC) integrated gate commutated thyristor (IGCT) voltage-source converters have been widely used in industry applications. The novel three-level active neutral-point-clamped (ANPC) IGCT voltage-source converters can provide three additional switch states compared to the the NPC counterparts. Thus, the ANPC converter can increase the rated power compared to NPC. In this paper, the switching states of the three-level ANPC IGCT voltage-source converters are illustrated. The commutations and power loss distribution of the IGCT devices are investigated. The strategy is implemented on a high power three-level ANPC voltage-source converter equipped with 4.5kV/4kA IGCT devices. The experimental results prove that the three-level ANPC voltage-source converter has higher power density compared to the conventional NPC counterparts.
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