Abstract
The new generation of synchrotron radiation sources sets advanced requirements in the performance of hybrid pixel detectors. A critical point in the design of such detectors is the choice of the sensor material. Chromium-compensated Gallium Arsenide (GaAs:Cr) is a promising candidate for use in pixel detectors, targeting imaging applications in the intermediate energy range 20–50 keV. In this work, thick GaAs:Cr sensors grown recently using the Liquid Encapsulated Czochralski (LEC) method were bonded to Timepix chips. The performance of the sensors was characterised by using various X-ray sources in view of imaging applications. The uniform illumination of the sensors reveals inhomogeneities due to the presence of crystal defects in the microscopic level. Using a micro-focused X-ray beam we extract sensitivity maps and the mobility-lifetime product at the pixel level. The results obtained confirm that the non-uniformities observed at the sensor level are directly linked with the microscopic defects. Overall, the efficient use of such sensors in X-ray imaging applications relies on their stability over irradiation-time.
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