Investigation of thermally stimulated conductivity of cobalt silicide

Abstract

Mono- and disilicide of cobalt were obtained in the near-surface region of diffusion-doped silicon by cobalt atoms. The thermally stimulated conductivity (TSC) of cobalt disilicide was investigated. The energy of the adhesion levels of 0.32 eV was determined for the structures of cobalt disilicide – doped silicon - cobalt disilicide. The influence of the illumination intensity on the TSC curves is investigated and it is shown that the illumination intensity does not affect the shape of the curve and weakly affects the magnitude of the maximum of the current peak.