Abstract
Mono- and disilicide of cobalt were obtained in the near-surface region of diffusion-doped silicon by cobalt atoms. The thermally stimulated conductivity (TSC) of cobalt disilicide was investigated. The energy of the adhesion levels of 0.32 eV was determined for the structures of cobalt disilicide – doped silicon - cobalt disilicide. The influence of the illumination intensity on the TSC curves is investigated and it is shown that the illumination intensity does not affect the shape of the curve and weakly affects the magnitude of the maximum of the current peak.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
