Abstract
Low energy inelastic electron tunneling spectra are presented for thermally formed oxides on copper films. Thinner oxide tunnel barriers are observed to contain interfacial gradients as evidenced by spectral intensity asymmetries between forward and reverse bias, whereas thicker oxides appear to be more uniform in composition. Spectral results are in good qualitative agreement with reported studies of bulk cuprous oxides, and the semiconducting nature of the oxide layers is reflected in a negative temperature coefficient of resistivity of the tunnel junctions.
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