Abstract
In this paper, we describe the superiority of the titanium nitride (TiN) film formed by atomic layer deposition (ALD) using a tetrakis(dimethylamino)titanium (TDMAT) precursor for metal-gate electrodes of planar metal–oxide–semiconductor field-effect transistors (MOSFETs). It was demonstrated that the resistivity of the ALD TiN was significantly reduced by NH3 post deposition annealing (PDA). The electrical characteristics of the ALD-TiN-gate MOS capacitors and planar MOSFETs were evaluated and compared with those of the physical-vapor-deposited (PVD) TiN. The performance of the ALD-TiN-gate cases was confirmed to be superior to that of the PVD-TiN-gate cases, which was explained by the lower interface trap density (Dit) of the ALD TiN/SiO2 gate stack.
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