Abstract
The resistance stability and thermal resistance of phase change memory devices using ∼40 nm diameter Ga-doped In2O3 nanowires (Ga:In2O3 NW) with different Ga-doping concentrations have been investigated. The estimated resistance stability (R(t)/R0 ratio) improves with higher Ga concentration and is dependent on annealing temperature. The extracted thermal resistance (Rth) increases with higher Ga-concentration and thus the power consumption can be reduced by ∼90% for the 11.5% Ga:In2O3 NW, compared to the 2.1% Ga:In2O3 NW. The excellent characteristics of Ga-doped In2O3 nanowire devices offer an avenue to develop low power and reliable phase change random access memory applications.
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