Investigation of Thermal and Hot-Wire Chemical Vapor Deposition Copper Thin Films on TiN Substrates Using CupraSelect<SUP>®</SUP> as Precursor

Abstract

Copper films were deposited on oxidized Si substrates covered with TiN using a novel chemical vapor deposition reactor in which reactions were assisted by a heated tungsten filament (hot-wire CVD, HWCVD). Liquid at room temperature hexafluoroacetylacetonate Cu(I) trimethylvinylsilane (CupraSelect) was directly injected into the reactor with the aid of a direct-liquid injection (DLI) system using N2 as carrier gas. The deposition rates of HWCVD Cu films obtained on TiN covered substrates were found to increase with filament temperature (65 and 170 degrees C were tested). The resistivities of HWCVD Cu films were found to be higher than for thermally grown films due to the possible presence of impurities into the Cu films from the incomplete dissociation of the precursor and W impurities caused by the presence of the filament. For HWCVD films grown at a filament temperature of 170 degrees C, smaller grains are formed than at 65 degrees C as shown from the taken SEM micrographs. XRD diffractograms taken on Cu films deposited on TiN could not reveal the presence of W compounds originating from the filament because the relative peak was masked by the TiN [112] peak.