Investigation of the width-dependent static characteristics of graphene nanoribbon field effect transistors using non-parabolic quantum-based model

Abstract

The performance of graphene nanoribbon field effect transistor (GNR FET) is investigated from a numerical model based on self-consistent non-equilibrium Green’s Function (NEGF) formulism in mode-space with position-dependent effective mass model and tight-binding model. The model accounts for the tunneling currents on the static performance of GNR FETs in two semiconducting families of armchair GNRs (3p,0) and (3p+1,0).We conclude that increasing the GNR width in both GNR families increases the leakage current and subthreshold swing, and decreases ION/IOFF ratio. In this scenario, GNR group (3p+1,0) leads to superior off-state performance such that GNR (7,0) has off-state current close to 2.5×10−16A, five orders of magnitude lower than GNR (6,0) as well as 67mV/decade subthreshold swing which is much smaller than that of 90mV/decade in GNR (6,0).